This study investigates the current-voltage (I-V) characteristics of 532 nm and 650 nm semiconductor laser diodes at multiple optical power levels (5–200 mW). A systematic experimental approach revealed distinct electrical behaviors, with threshold voltages ranging from 1.5 to 2.0 V. Lower-power lasers (50 mW for 532 nm and 100 mW for 650 nm) exhibited current saturation, reaching maxima of 225 mA and 183 mA, respectively. Higher-power lasers (200 mW) showed near-linear I-V characteristics, with 532 nm lasers achieving up to 829 mA at 4V, while 650 nm reached 384 mA. The 650 nm lasers generally displayed lower threshold voltages, while the 532 nm lasers showed more pronounced saturation. These insights are vital for designing efficient driver circuits and optimizing the performance of semiconductor lasers in optical communication and photonic systems. These findings support the design of efficient driver circuits and contribute to improved performance of semiconductor lasers in photonic and optoelectronic systems.
Current-voltage (I-V) characteristics, Laser driver optimization, Optical power levels, Semiconductor laser diodes, Threshold voltage, Wavelength dependence
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