Single-walled carbon nanotubes (SWNTs) have proven to be essential building blocks for nanoscale electronics owing to their outstanding electrical characteristics and quasi-one-dimensional geometry. The present research examines the electron-phonon interaction in metallic SWNTs, an important factor affecting charge transport behavior under varying bias conditions. With a new experimental technique where an atomic force microscope (AFM) tip was used as a mobile electrical contact, resistance was measured for different nanotube lengths and electrical biases. At low bias, the electron mean free path was determined to be about 1.6 µm, in agreement with weak acoustic phonon scattering. But at high bias, a sudden drop in the mean free path to about 10 nm was seen, caused by fast scattering by optical and zone-boundary phonons. Theoretical computations based on Boltzmann transport theory validate the experimental findings, providing quantitative information about current saturation and high-field transport behavior. These studies significantly further the knowledge of intrinsic transport limitations in SWNTs and recommend their use in high-performance nanoscale devices.
Carbon Nanotube Field-Effect Transistors (CNFETs), Single-Walled Carbon Nanotubes (SWNTs), Metal–Nanotube Contact, Electron-Phonon Scattering, Ballistic Transport, Schottky Barrier, Contact Resistance, High-Bias Transport, Current Saturation, Boltzmann Transport Equation
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