Home > Engineering > Electronics & Communication Engineering > Volume-9 > Issue-3 > Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design: Survey Paper

Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design: Survey Paper

Call for Papers

Volume-9 | Issue-4

Last date : 27-Aug-2025

Best International Journal
Open Access | Peer Reviewed | Best International Journal | Indexing & IF | 24*7 Support | Dedicated Qualified Team | Rapid Publication Process | International Editor, Reviewer Board | Attractive User Interface with Easy Navigation

Journal Type : Open Access

First Update : Within 7 Days after submittion

Submit Paper Online

For Author

Research Area


Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design: Survey Paper


Tanuja C | Sinchana V Bhat | Suchi C | Yashaswini M A



Tanuja C | Sinchana V Bhat | Suchi C | Yashaswini M A "Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design: Survey Paper" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-9 | Issue-3, June 2025, pp.757-761, URL: https://www.ijtsrd.com/papers/ijtsrd80032.pdf

This paper presents a computationally efficient physics-based compact model designed for conventional CNTFETs with MOSFET-like operation. A key novelty is the implementation of a new analytical model for channel charge. The model is cross-linked with Boltzmann Monte Carlo (MC) simulation. Comparison of electrical characteristics from MC simulation and compact modeling demonstrates the model's accuracy within its validity range. Furthermore, the compact model is used to determine CNTFET threshold voltage distribution and evaluate propagation delay dispersion in a ring oscillator, based on a study of CNT diameter dispersion across three technological processes.

Carbon Nanotube Field-Effect Transistor (CNTFET), Compact Modeling, MOSFET-like Behavior, Ballistic Transport, Channel Charge Modeling, Self-consistent Loop, Boltzmann Monte Carlo Simulation, Threshold Voltage Distribution, Propagation Delay, Ring Oscillator, Circuit Simulation, Device Variability, Analytical Modeling, Nanodevice Performance, CNT Diameter Dispersion


IJTSRD80032
Volume-9 | Issue-3, June 2025
757-761
IJTSRD | www.ijtsrd.com | E-ISSN 2456-6470
Copyright © 2019 by author(s) and International Journal of Trend in Scientific Research and Development Journal. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0) (http://creativecommons.org/licenses/by/4.0)

International Journal of Trend in Scientific Research and Development - IJTSRD having online ISSN 2456-6470. IJTSRD is a leading Open Access, Peer-Reviewed International Journal which provides rapid publication of your research articles and aims to promote the theory and practice along with knowledge sharing between researchers, developers, engineers, students, and practitioners working in and around the world in many areas like Sciences, Technology, Innovation, Engineering, Agriculture, Management and many more and it is recommended by all Universities, review articles and short communications in all subjects. IJTSRD running an International Journal who are proving quality publication of peer reviewed and refereed international journals from diverse fields that emphasizes new research, development and their applications. IJTSRD provides an online access to exchange your research work, technical notes & surveying results among professionals throughout the world in e-journals. IJTSRD is a fastest growing and dynamic professional organization. The aim of this organization is to provide access not only to world class research resources, but through its professionals aim to bring in a significant transformation in the real of open access journals and online publishing.

Thomson Reuters
Google Scholer
Academia.edu

ResearchBib
Scribd.com
archive

PdfSR
issuu
Slideshare

WorldJournalAlerts
Twitter
Linkedin