On the low temperature resistivity measurement of CdSe thin film
Most group II VI compounds are direct band gap semiconductors with high optical absorption and emission coefficients .Cadmium Selenide is a leading candidate with high potential towards many applications. The authors present their investigations dealing with preparation and some electrical characterization of the CdSe thin films. The films were deposited onto a well cleaned glass substrates using thermal evaporation technique. The dependence of electrical resistivity of CdSe thin film in low temperature range has been studied.
Cadmium Selenide, thermal evaporation technique, thin film, electrical resistivity
R.K.Shah | H.O.Parmar | H.S.Patel