Improving Analog Performance and Suppression of Subthreshold Swing using Hetero-Junction Less Double Gate Tunnel FETs

Dr. Prabha Shreeraj Nair

Title:
Improving Analog Performance and Suppression of Subthreshold Swing using Hetero-Junction Less Double Gate Tunnel FETs

Authors:
Dr. Prabha Shreeraj Nair
DOI:
https://doi.org/10.31142/ijtsrd5780

Cite This Article :

Dr. Prabha Shreeraj Nair "Improving Analog Performance and Suppression of Subthreshold Swing using Hetero-Junction Less Double Gate Tunnel FETs" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-1 | Issue-6, October 2017, pp.1312-1316, URL: https://www.ijtsrd.com/papers/ijtsrd5780.pdf

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Abstract :
In this paper, we investigated a new device, Hetero-junction less (H-JL) Double Gate Tunnel Field Effect Transistors (DGTFET) with high-k. III-V semiconductor material (like InAs-Si) gives excellent performance when InAs uses at source side, because of low band gap of 0.36 eV it reduces the potential barrier height of source channel interface causing maximum carriers are fastly tunnel across the source to drain in ON state whereas Si, at the drain side as higher bandgap Of increasing the barrier height of drain channel interface causing lower quantum tunneling occur, as a result good ION/IOFF ratio. The InAs-source JLDGTFET with high-k (Hfo2) at 20 nm channel length provide a tremendous characteristics with high ratio , a point subthreshold swing (SS) and average SS is at room temperature. The simulation study of proposed device is done using sentaurus tools.

Keywords :
Band to Band Tunneling (BTBT), high dielectric material, junctionless, quantum tunnelling, SS, tunnel field effect transistors (TFETs)

Publication Details:

Unique Identification Number : IJTSRD5780

Published In : Volume-1 | Issue-6, October 2017

Page Number(s) : 1312-1316

Publisher Name : IJTSRD | www.ijtsrd.com | E-ISSN 2456-6470

Copyright © 2019 by author(s) and International Journal of Trend in Scientific Research and Development Journal. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0) (http://creativecommons.org/licenses/by/4.0)

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